Consumables >> Consumables >> GaInP/GaAs/Ge Epitaxial Wafer-30% Triple Junction
                
The  unprocessed Epitaxial Wafers of class 30% contain our high-efficiency GaInP/GaAs/Ge based epitaxial layers on a Ge substrate. These epixial wafers can be used for any further processing and customized cell designs.

















Design and Mechanical Data

  
Substrate Material ：GaInP/GaInAs/Ge on Ge substrate Base Material ：100 mm ±0.20

 
Thickness ：145 μm ±15 μm or 175 μm ±15 μm

 
Major Flat length ：32.5 mm ±2 mm

 
Major Flat orientation：(100) ±2°	

 
 

 
Average Weight ：≤ 93 mg/cm2

 
Laser mark label：Alpha-numeric
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